Min-Hwi Kim

According to our database, Min-Hwi Kim authored at least 7 papers between 2015 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Biodegradable and Flexible Polymer-Based Memristor Possessing Optimized Synaptic Plasticity for Eco-Friendly Wearable Neural Networks with High Energy Efficiency.

Sungjun Oh, Hyungjin Kim, Seong Eun Kim, Min-Hwi Kim, Hea-Lim Park, Sin-Hyung Lee

Adv. Intell. Syst., May, 2023

2022

Systematic Engineering of Metal Ion Injection in Memristors for Complex Neuromorphic Computing with High Energy Efficiency.

Seong Eun Kim, Min-Hwi Kim, Jisu Jang, Hyungjin Kim, Sungjun Kim, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, Sin-Hyung Lee

Adv. Intell. Syst., 2022

A Fast Weight Transfer Method for Real-Time Online Learning in RRAM-Based Neuromorphic System.

Min-Hwi Kim, Sin-Hyung Lee, Sungjun Kim, Byung-Gook Park

IEEE Access, 2022

2020

Insertion of Ag Layer in TiN/SiN_x/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation.

Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park

IEEE Access, 2020

2019

Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices.

Chandreswar Mahata, Wonwoo Kim, Shiwhan Kim, Muhammad Ismail, Min-Hwi Kim, Sungjun Kim, Byung-Gook Park

IEICE Electron. Express, 2019

2016

Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell.

Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park

IEICE Trans. Electron., 2016

2015

Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals.

Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park

IEICE Trans. Electron., 2015