Mingxue Huo

According to our database, Mingxue Huo authored at least 5 papers between 2009 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Design of a high-performance 12T SRAM cell for single event upset tolerance.

Chunhua Qi, Yanqing Zhang, Guoliang Ma, Chaoming Liu, Tianqi Wang, Liyi Xiao, Mingxue Huo, Guofu Zhai

Sci. China Inf. Sci., 2021

2019

Single-event upset prediction in static random access memory cell account for parameter variations.

Mingxue Huo, Guoliang Ma, Bin Zhou, Liyi Xiao, Chunhua Qi, Yanqing Zhang, Jianning Ma, Yinghun Piao, Tianqi Wang

Sci. China Inf. Sci., 2019

2017

A 13T radiation-hardened memory cell for low-voltage operation and ultra-low power space applications.

Chunhua Qi, Liyi Xiao, Mingxue Huo, Tianqi Wang, Rongsheng Zhang, Xuebing Cao

Proceedings of the 18th International Symposium on Quality Electronic Design, 2017

2015

Novel technique for P-hit single-event transient mitigation using enhance dummy transistor.

Tianqi Wang, Liyi Xiao, Mingxue Huo, Chunhua Qi, Shanshan Liu

Proceedings of the Sixteenth International Symposium on Quality Electronic Design, 2015

2009

Piezoresistive properties of heavily doped P-type polysilicon films.

Xuebin Lu, Xiaowei Liu, Rongyan Chuai, Changzhi Shi, Mingxue Huo, Weiping Chen

Proceedings of the 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2009