Ningyuan Yin

Orcid: 0000-0001-6307-0004

According to our database1, Ningyuan Yin authored at least 7 papers between 2013 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2023
Parallel-Prefix Adder in Spin-Orbit Torque Magnetic RAM for High Bit-Width Non-Volatile Computation.
IEEE Trans. Circuits Syst. II Express Briefs, February, 2023

High-Reliability, Reconfigurable, and Fully Non-volatile Full-Adder Based on SOT-MTJ for Image Processing Applications.
IEEE Trans. Circuits Syst. II Express Briefs, February, 2023

A 6T-3M SOT-MRAM for in-memory computing with reconfigurable arithmetic operations.
IEICE Electron. Express, 2023

2022
An in-memory computing multiply-and-accumulate circuit based on ternary STT-MRAMs for convolutional neural networks.
IEICE Electron. Express, 2022

2021
An MTJ-Based Asynchronous System With Extremely Fine-Grained Voltage Scaling.
IEEE Trans. Circuits Syst. I Regul. Pap., 2021

2017
The write deduplication mechanism based on a novel low-power data latched sense amplifier for a magnetic tunnel junction based non-volatile memory.
Proceedings of the 12th IEEE International Conference on ASIC, 2017

2013
A novel ESD device for Whole-Chip ESD protection network of TPMS mixed signal SoC.
Proceedings of the IEEE 10th International Conference on ASIC, 2013


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