P. M. Gammon

According to our database, P. M. Gammon authored at least 2 papers between 2011 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications.

K. Ben Ali, P. M. Gammon, C. W. Chan, F. Li, V. Pathirana, T. Trajkovic, Farzan Gity, Denis Flandre, Valeria Kilchytska

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2011

Temperature behavior and modeling of ohmic contacts to Si⁺ implanted n-type GaN.

Amador Pérez-Tomás, Marcel Placidi, Abel Fontserè, P. M. Gammon, Michael R. Jennings

Microelectron. Reliab., 2011