Amador Pérez-Tomás

According to our database, Amador Pérez-Tomás authored at least 6 papers between 2004 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2012

Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1).

Abel Fontserè, A. Pérez-Tomás, Marcel Placidi, N. Baron, S. Chenot, Yvon Cordier, J. C. Moreno

Microelectron. Reliab., 2012

Wafer scale and reliability investigation of thin HfO₂·AlGaN/GaN MIS-HEMTs.

Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens

Microelectron. Reliab., 2012

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.

Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

Temperature behavior and modeling of ohmic contacts to Si⁺ implanted n-type GaN.

Amador Pérez-Tomás, Marcel Placidi, Abel Fontserè, P. M. Gammon, Michael R. Jennings

Microelectron. Reliab., 2011

2007

High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC.

Amador Pérez-Tomás, Michael R. Jennings, M. Davis, Vishal Shah, T. Grasby, James Anthony Covington, Philip A. Mawby

Microelectron. J., 2007

2004

IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

Amador Pérez-Tomás, Xavier Jordà, Philippe Godignon, Jose Luis Gálvez, Miquel Vellvehí, José Millán

Microelectron. J., 2004