K. Ben Ali

According to our database, K. Ben Ali authored at least 2 papers between 2015 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications.

K. Ben Ali, P. M. Gammon, C. W. Chan, F. Li, V. Pathirana, T. Trajkovic, Farzan Gity, Denis Flandre, Valeria Kilchytska

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

Through silicon via to FinFET noise coupling in 3-D integrated circuits.

A. Rouhi Najaf Abadi, W. Guo, X. Sun, K. Ben Ali, Jean-Pierre Raskin, Martin Rack, C. Roda Neve, M. Choi, V. Moroz, Geert Van der Plas, Ingrid De Wolf, Eric Beyne, Philippe P. Absil

Proceedings of the 2015 International Conference on IC Design & Technology, 2015