Qi Guo

Affiliations:
  • Chinese Academy of Sciences, Xinjiang Technical Institute of Physics and Chemistry, Ürümqi, China


According to our database1, Qi Guo authored at least 7 papers between 2017 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation.
IEEE Access, 2024

2023
Effects of Hot Pixels on Pixel Performance on Backside Illuminated Complementary Metal Oxide Semiconductor (CMOS) Image Sensors.
Sensors, July, 2023

2020
Modeling of TID-induced leakage current in ultra-deep submicron SOI NMOSFETs.
Microelectron. J., 2020

2018
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by <sup>60</sup>Co γ irradiation under different biases.
Microelectron. Reliab., 2018

The total ionizing dose response of leading-edge FDSOI MOSFETs.
Microelectron. Reliab., 2018

Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices.
Microelectron. Reliab., 2018

2017
1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells.
Sci. China Inf. Sci., 2017


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