R. ElKashlan

According to our database, R. ElKashlan authored at least 2 papers in 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability.

Hao Yu, R. ElKashlan, Meng-Che Tsai, Yi Yang, Mamoun Guenach, Ying-Chun Kuo, Sachin Yadav, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, D. Xiao, Claude Desset, AliReza Alian, Uthayasankaran Peralagu, V. Afans'ev, T.-L. Wu, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications.

Aarti Rathi, Barry J. O'Sullivan, R. ElKashlan, B. Kazemi Esfeh, Arturo Sibaja Hernandez, Hao Yu, AliReza Alian, Sachin Yadav, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2025