AliReza Alian

According to our database, AliReza Alian authored at least 8 papers between 2015 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications.

Vamsi Putcha, H. Yu, Jacopo Franco, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies.

Abhitosh Vais, Brent Hsu, Olga Syshchyk, Hao Yu, AliReza Alian, Yves Mols, Komal Vondkar Kodandarama, Bernardette Kunert, Niamh Waldron, Eddy Simoen, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2021

On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices.

Vamsi Putcha, Liang Cheng, AliReza Alian, Ming Zhao, Hai Lu, Bertrand Parvais, Niamh Waldron, Dimitri Linten, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2021

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities.

Sachin Yadav, Pieter Cardinael, Ming Zhao, Komal Vondkar, Uthayasankaran Peralagu, AliReza Alian, Ahmad Khaled, Sergej Makovejev, Enrique Ekoga, Dimitri Lederer, Jean-Pierre Raskin, Bertrand Parvais, Nadine Collaert

Proceedings of the International Conference on IC Design and Technology, 2021

2020

Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications.

Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2016

Beyond-Si materials and devices for more Moore and more than Moore applications.

Nadine Collaert, AliReza Alian, Hiroaki Arimura, Geert Boccardi, Geert Eneman, Jacopo Franco, Tsvetan Ivanov, Dennis Lin, Jérôme Mitard, S. Ramesh, R. Rooyackers, Marc Schaekers, A. Sibaya-Hernandez, S. Sioncke, Quentin Smets, Abhitosh Vais, A. Vandooren, Anabela Veloso, Anne S. Verhulst, D. Verreck, Niamh Waldron, Amey Walke, Liesbeth Witters, H. Yu, X. Zhou, Aaron Voon-Yew Thean

Proceedings of the International Conference on IC Design and Technology, 2016

2015

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices.

Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer

Proceedings of the IEEE International Reliability Physics Symposium, 2015

ESD characterization of planar InGaAs devices.

Zhigang Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Y. Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2015