According to our database1, Rishu Chaujar authored at least 15 papers between 2007 and 2022.
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Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero-material tunneling interfaced charge plasma junctionless tunnel field effect transistor.
Int. J. Circuit Theory Appl., 2022
Compatibility of a Truncated Fin-FinFET as a k-modulated Biosensor with Optimum parameters for Pre-emptive Diagnosis of Diseases.
Comput. Electr. Eng., 2022
Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications.
IET Circuits Devices Syst., 2020
Effects of Neural Mechanisms of Pretask Resting EEG Alpha Information on Situational Awareness: A Functional Connectivity Approach.
Hum. Factors, 2020
Proceedings of the 9th International Conference on Modern Circuits and Systems Technologies, 2020
Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications.
Proceedings of the TENCON 2019, 2019
Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications.
Proceedings of the 8th International Conference on Modern Circuits and Systems Technologies, 2019
Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications.
Proceedings of the TENCON 2018, 2018
Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability.
Microelectron. Reliab., 2016
Microelectron. J., 2016
Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency.
Proceedings of the 2014 Fifth International Symposium on Electronic System Design, 2014
Microelectron. Reliab., 2012
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor.
Microelectron. Reliab., 2011
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency.
Microelectron. J., 2008
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation.
Microelectron. J., 2007