Sneha Kabra

According to our database, Sneha Kabra authored at least 5 papers between 2006 and 2007.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2007

Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation.

Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta, R. S. Gupta

Microelectron. J., 2007

An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET.

Harsupreet Kaur, Sneha Kabra, Subhasis Haldar, R. S. Gupta

Microelectron. J., 2007

Two-dimensional subthreshold analysis of sub-micron GaN MESFET.

Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta

Microelectron. J., 2007

2006

An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications.

Sona P. Kumar, Anju Agrawal, Sneha Kabra, Mridula Gupta, R. S. Gupta

Microelectron. J., 2006

A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications.

Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta

Microelectron. J., 2006