Sona P. Kumar

According to our database, Sona P. Kumar authored at least 4 papers between 2006 and 2011.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2011

Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor.

Sona P. Kumar, Anju Agrawal, Rishu Chaujar, R. S. Gupta, Mridula Gupta

Microelectron. Reliab., 2011

2008

Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency.

Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R. S. Gupta

Microelectron. J., 2008

2007

Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation.

Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta, R. S. Gupta

Microelectron. J., 2007

2006

An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications.

Sona P. Kumar, Anju Agrawal, Sneha Kabra, Mridula Gupta, R. S. Gupta

Microelectron. J., 2006