R. S. Gupta
According to our database1,
R. S. Gupta
authored at least 34 papers
between 2003 and 2023.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
On csauthors.net:
Bibliography
2023
Nanoscale Temperature Dependent Quantum-Effect Analytical Model of Short- Channel, Junction-Less, Double-Gate Stack (SC-JL-DG) MOSFET for Analog Applications at Higher Frequencies.
Microelectron. J., November, 2023
Modeling of Dual- Metal Junctionless Accumulation-Mode cylindrical surrounding gate (DM-JAM-CSG) MOSFET for cryogenic temperature applications.
Microelectron. J., September, 2023
Quantum Effect Dependent Modelling of Short Channel Junctionless Double Gate Stack(SC-JL-DG) MOSFET for High Frequency Analog Applications.
Microelectron. J., April, 2023
Analytical modelling, simulation, and characterization of temperature-dependent GaN-HK-SBNWFET for high-frequency application.
Microelectron. J., 2023
Ge/Si interfaced label free nanowire BIOFET for biomolecules detection - analytical analysis.
Microelectron. J., 2023
Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach.
Microelectron. J., 2023
2022
Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered- Schottky nano-wire fet(GaN-GME-DE-SNW-fet) based label-free biosensor.
Microelectron. J., 2022
2018
Simulating Optical Behavior of Nano Dimensional InAlAs/InGaAs HEMT for IoT Applications.
Proceedings of the 20th UKSim-AMSS International Conference on Computer Modelling and Simulation, 2018
2015
Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications.
Proceedings of the 27th International Conference on Microelectronics, 2015
2014
Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity.
Microelectron. Reliab., 2014
An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering.
Microelectron. J., 2014
Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation.
Microelectron. J., 2014
2013
Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter.
Microelectron. Reliab., 2013
Microelectron. J., 2013
2012
Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor.
Microelectron. Reliab., 2012
Microelectron. Reliab., 2012
Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications.
Microelectron. Reliab., 2012
Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range.
Microelectron. Reliab., 2012
Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis.
Microelectron. Reliab., 2012
An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET.
Microelectron. J., 2012
Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT.
Proceedings of the 14th International Conference on Computer Modelling and Simulation, 2012
2011
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor.
Microelectron. Reliab., 2011
2009
Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect.
Microelectron. Reliab., 2009
Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT.
Microelectron. Reliab., 2009
Appl. Math. Comput., 2009
2008
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency.
Microelectron. J., 2008
2007
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation.
Microelectron. J., 2007
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET.
Microelectron. J., 2007
Microelectron. J., 2007
A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications.
Microelectron. J., 2007
2006
An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications.
Microelectron. J., 2006
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications.
Microelectron. J., 2006
An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability.
Microelectron. J., 2006
2003
Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor.
Microelectron. J., 2003