Rubin Xie

Orcid: 0009-0001-6477-0413

According to our database¹, Rubin Xie authored at least 3 papers between 2022 and 2026.

Collaborative distances:

Dijkstra number² of six.
Erdős number³ of five.

Timeline

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Bibliography

2026

Simulation study on a single-event burnout hardened shielded gate trench MOSFET with a P-type buried layer.

[BibT_eX]

[DOI]

Microelectron. J., 2026

Enhanced total-ionizing-dose tolerance of transistors via process optimization in a 0.18μm BCD technology.

[BibT_eX]

[DOI]

Microelectron. J., 2026

2022

Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18µm Process Technology.

[BibT_eX]

[DOI]

Proceedings of the IEEE Asia Pacific Conference on Circuit and Systems, 2022

Rubin Xie

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Links

On csauthors.net:

Bibliography

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