Ming Qiao

According to our database, Ming Qiao authored at least 18 papers between 2010 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2026

A novel level-shifting technique with air-gap self-shielding structure for 700 V high-voltage gate driver ICs.

Guoliang Yao, Ming Qiao, Dingxiang Ma, Bo Zhang

Microelectron. J., 2026

Enhanced total-ionizing-dose tolerance of transistors via process optimization in a 0.18μm BCD technology.

Rubin Xie, Chaoyang Ge, Hong Peng, Qiang Yang, Xin Zhou, Bo Zhang, Ming Qiao

Microelectron. J., 2026

A novel divided RESURF technology with high-side zero-bias pinch-off JFET and its experiments.

Zhenyan Liu, Teng Liu, Jian Xu, Shixiong Chong, Yuheng Yao, Yongyu Shi, Haoyu Li, Lihui Gu, Nailong He, Sen Zhang, Ming Qiao, Wentong Zhang, Zhaoji Li, Bo Zhang

Microelectron. J., 2026

2025

Research on radiation hardening of oscillator circuits based on LDMOS devices.

Xiaohui Li, Ming Qiao, Jitao Li, Zhaoji Li, Qiang Wang, Hongjun Wang, Bo Zhang

Microelectron. J., 2025

Development of a 65V low Ron,sp N-type LDMOS on 180 nm BCD platform.

Qi Ding, Ning Ning, Jun Huang, Renxiong Li, Yu Wang, Yutuo Guo, Kunqin He, Yaxin Liu, Ziyi Zeng, Huaishan Wang, Juan Tang, Qiuyue Huo, Lulu Peng, Zhaoji Li, Bo Zhang, Ming Qiao

Microelectron. J., 2025

R2A-TLS: Reflective Retrieval-Augmented Timeline Summarization with Causal-Semantic Integration.

Chenlong Bao, Shijie Li, Minghao Hu, Ming Qiao, Bin Zhang, Jin-Tao Tang, Shasha Li, Ting Wang

Proceedings of the Findings of the Association for Computational Linguistics: EMNLP 2025, 2025

2024

A novel SPICE model of shorted-anode lateral insulated-gate bipolar transistor.

Yixun Jiang, Qingfeng Kong, Ming Qiao, Yin Guo, Yuxi Tang, Xinxin Liu, Sen Zhang, Bo Zhang

Microelectron. J., 2024

2023

An ultralow specific on-resistance bidirectional trench power MOSFET with RESURF stepped oxide.

Dong Fang, Wenliang Liu, Ming Qiao, Xingrui Long, Zhao Qi, Bo Zhang

Microelectron. J., February, 2023

A physics-based compact model of shield gate trench MOSFET.

Yixun Jiang, Ming Qiao, Yin Guo, Zuquan Zheng, Lijun Shen, Xinxin Liu, Sen Zhang, Zhaoji Li, Bo Zhang

Microelectron. J., 2023

2022

A low gate charge field-plate trench MOSFET with hollow split gate structure.

Ming Qiao, Tao Ma, Shida Dong, Zhengkang Wang, Shuhao Zhang, Zhaoji Li, Bo Zhang

Microelectron. J., 2022

Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region.

Dong Fang, Guang Yang, Ming Qiao, Kui Xiao, Xiangyu Yang, Zheng Bian, Bo Zhang

Microelectron. J., 2022

Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18µm Process Technology.

Langtao Chen, Xin Zhou, Ying Wang, Ying Kong, Rubin Xie, Ling Peng, Yantu Mo, Ming Qiao, Bo Zhang

Proceedings of the IEEE Asia Pacific Conference on Circuit and Systems, 2022

2021

Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer.

Zhengkang Wang, Ming Qiao, Zhaoji Li, Bo Zhang

Microelectron. J., 2021

2016

Geographical Situation Monitoring Applications Based on MiniSAR.

Xuejing Shi, Gang Huang, Ming Qiao, Bingnan Wang

Proceedings of the Geo-Spatial Knowledge and Intelligence, 2016

2015

Effect of field implantation on off- and on-state characteristics for thin layer SOI field P-channel LDMOS.

Xin Zhou, Ming Qiao, Yang Li, Zhaoji Li, Bo Zhang

Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015

2014

A review of HVI technology.

Ming Qiao, Xin Zhang, Shuai Wen, Bo Zhang, Zhaoji Li

Microelectron. Reliab., 2014

2013

ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications.

Lingli Jiang, Hang Fan, Ming Qiao, Bo Zhang, Zhaoji Li

Microelectron. Reliab., 2013

2010

Control system design and analysis of FRP pipe thread-grinding machine.

Jiazhong Xu, Ming Qiao, Xinying Wang

Int. J. Comput. Appl. Technol., 2010