Rui Chen

Orcid: 0000-0002-6128-1657

Affiliations:

National Space Science Center, Chinese Academy of Sciences, Beijing, China

According to our database¹, Rui Chen authored at least 5 papers between 2017 and 2026.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

Legend:

Book In proceedings Article PhD thesis Dataset Other

Bibliography

2026

Study on single event burnout mechanism on the "step current" of SiC schottky diodes.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2026

2025

Investigating the Electric Field Influence on Total Ionization Dose Effects in Space Radiation for Carbon Nanotube Field Effect Transistors.

[BibT_eX]

[DOI]

IEEE Access, 2025

2024

Single event effect mechanism study in 130nm fully depleted SOI technology devices.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2024

2020

Study on the single-event upset sensitivity of 65-nm CMOS sequential logic circuit.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2020

2017

Comparison of single-event upset generated by heavy ion and pulsed laser.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2017

Rui Chen

Timeline

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Bibliography

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