Shipeng Shangguan

According to our database, Shipeng Shangguan authored at least 4 papers between 2017 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

Study on single event burnout mechanism on the "step current" of SiC schottky diodes.

Yanan Liang, Ziyu Wang, Rui Chen, Jianwei Han, Bing Liu, Qian Chen, Shipeng Shangguan

IEICE Electron. Express, 2026

2024

Single event effect mechanism study in 130nm fully depleted SOI technology devices.

Rui Chen, Ziyu Wang, Sai Li, Jianwei Han, Yanan Liang, Qian Chen, Shipeng Shangguan, Runjie Yuan

IEICE Electron. Express, 2024

2020

Study on the single-event upset sensitivity of 65-nm CMOS sequential logic circuit.

Sai Li, Jianwei Han, Rui Chen, Shipeng Shangguan, Yingqi Ma, Xuan Wang

IEICE Electron. Express, 2020

2017

Comparison of single-event upset generated by heavy ion and pulsed laser.

Bin Liang, Ruiqiang Song, Jianwei Han, Yaqing Chi, Rui Chen, Chunmei Hu, Jianjun Chen, Yingqi Ma, Shipeng Shangguan

Sci. China Inf. Sci., 2017