Rui Zhang

Affiliations:
  • Zhejiang University, College of Electronic Engineering and Information Science, Hangzhou, China
  • The University of Tokyo, Japan (PhD 2012)


According to our database1, Rui Zhang authored at least 4 papers between 2015 and 2018.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

Online presence:

On csauthors.net:

Bibliography

2018
Ge CMOS technology with advanced interface and junction engineering.
Proceedings of the 2018 International Conference on IC Design & Technology, 2018

2017
NiGe metal source/drain Ge pMOSFETs for future high performance VLSI circuits applications.
Proceedings of the 12th IEEE International Conference on ASIC, 2017

2016
Gate length dependence of bias temperature instability behavior in short channel SOI MOSFETs.
Microelectron. Reliab., 2016

2015
PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bonding.
Proceedings of the IEEE International Reliability Physics Symposium, 2015


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