Ruqiang Bao

According to our database, Ruqiang Bao authored at least 4 papers between 2017 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

SiGe Gate-All-around Nanosheet Reliability.

Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Curtis Durfee, Liqiao Qin, Jingyun Zhang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

TDDB Reliability in Gate-All-Around Nanosheet.

Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor.

Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2017

Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS.

ChoongHyun Lee, Richard G. Southwick, Shogo Mochizuki, Paul Jamison, Ruqiang Bao, Rajan Kumar Pandey, Aniruddha Konar, Takashi Ando, Vijay Narayanan, Bala Haran, Hemanth Jagannathan

Proceedings of the 12th IEEE International Conference on ASIC, 2017