Huimei Zhou

According to our database, Huimei Zhou authored at least 8 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices.

Huimei Zhou, Miaomiao Wang, Nicolas Loubet, Andrew Gaul, Yasir Sulehria

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

SiGe Gate-All-around Nanosheet Reliability.

Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Curtis Durfee, Liqiao Qin, Jingyun Zhang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

TDDB Reliability in Gate-All-Around Nanosheet.

Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs.

Nilotpal Choudhury, Tarun Samadder, Ravi Tiwari, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor.

Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

A new technique for evaluating stacked nanosheet inner spacer TDDB reliability.

Tian Shen, Koji Watanabe, Huimei Zhou, Michael Belyansky, Erin Stuckert, Jingyun Zhang, Andrew Greene, Veeraraghavan S. Basker, Miaomiao Wang

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs.

Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor.

Miaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick, Robin Hsin Kuo Chao, Xin Miao, Veeraraghavan S. Basker, Tenko Yamashita, Dechao Guo, Gauri Karve, Huiming Bu, James H. Stathis

Proceedings of the IEEE International Reliability Physics Symposium, 2019