Sami Alghamdi

According to our database, Sami Alghamdi authored at least 5 papers between 2018 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer.

Chaoqun Zhang, Hong Zhou, Sami Alghamdi, Kun Zhang, Zhihong Liu, Yue Hao, Jingcheng Zhang

Sci. China Inf. Sci., 2025

1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations.

Yitao Feng, Hong Zhou, Sami Alghamdi, Hao Fang, Xiaorong Zhang, Yanbo Chen, Guotao Tian, Saud Wasly, Yue Hao, Jincheng Zhang

Sci. China Inf. Sci., 2025

2023

Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage.

Pengfei Dong, Chenlu Wang, Qinglong Yan, Yingming Wang, Jian Wang, Sami Alghamdi, Zhihong Liu, Jincheng Zhang, Hong Zhou, Yue Hao

Proceedings of the Device Research Conference, 2023

2018

Low frequency noise in MOS2 negative capacitance field-effect transistor.

Sami Alghamdi, Mengwei Si, Lingming Yang, Peide D. Ye

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors.

Sami Alghamdi, Wonil Chung, Mengwei Si, Peide D. Ye

Proceedings of the 76th Device Research Conference, 2018