Mengwei Si
Affiliations:- Purdue University, West Lafayette, USA
According to our database1,
Mengwei Si
authored at least 12 papers
between 2015 and 2023.
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Bibliography
2023
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
2022
Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 10<sup>9</sup> Cycles without VT Drift Penalty.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
2019
Proceedings of the Device Research Conference, 2019
2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique.
Proceedings of the 76th Device Research Conference, 2018
The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond.
Proceedings of the 76th Device Research Conference, 2018
Proceedings of the 76th Device Research Conference, 2018
Proceedings of the 76th Device Research Conference, 2018
Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors.
Proceedings of the 76th Device Research Conference, 2018
2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015