Sanjay K. Banerjee

According to our database, Sanjay K. Banerjee authored at least 8 papers between 1990 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices.

S. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay K. Banerjee

Proceedings of the Device Research Conference, 2022

2021

Machine Learning for Statistical Modeling: The Case of Perpendicular Spin-Transfer-Torque Random Access Memory.

Urmimala Roy, Tanmoy Pramanik, Subhendu Roy, Avhishek Chatterjee, Leonard F. Register, Sanjay K. Banerjee

ACM Trans. Design Autom. Electr. Syst., 2021

2019

Neural Network Assisted Compact Model for Accurate Characterization of Cycle-to-cycle Variations in 2-D $h$-BN based RRAM devices.

Jacob N. Rohan, Pingping Zhuang, S. S. Teja Nibhanupudi, Sanjay K. Banerjee, Jaydeep P. Kulkarni

Proceedings of the Device Research Conference, 2019

Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors.

Omar B. Mohammed, Leonard F. Register, Sanjay K. Banerjee

Proceedings of the Device Research Conference, 2019

2018

Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering.

Amritesh Rai, Jun Hong Park, Chenxi Zhang, Iljo Kwak, Steven Wolf, Suresh Vishwanath, Xinyu Lin, Jacek Furdyna, Huili Grace Xing, Kyeongjae Cho, Andrew C. Kummel, Sanjay K. Banerjee

Proceedings of the 76th Device Research Conference, 2018

2010

Graphene for CMOS and Beyond CMOS Applications.

Sanjay K. Banerjee, Leonard Franklin Register, Emanuel Tutuc, Dipanjan Basu, Seyoung Kim, Dharmendar Reddy, Allan H. MacDonald

Proc. IEEE, 2010

2005

Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs.

David Q. Kelly, Sagnik Dey, David Onsongo, Sanjay K. Banerjee

Microelectron. Reliab., 2005

1990

A universal MOSFET mobility degradation model for circuit simulation.

Gregory Munson Yeric, A. F. Tasch Jr., Sanjay K. Banerjee

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1990