A. F. Tasch Jr.

According to our database, A. F. Tasch Jr. authored at least 8 papers between 1979 and 1998.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

1998

Hydrodynamic (HD) Simulation of <i>N</i>-Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model.

Haihong Wang, Wei-Kai Shih, Susan Green, Scott Hareland, Christine M. Maziar, A. F. Tasch Jr.

VLSI Design, 1998

A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers.

Wei-Kai Shih, Srinivas Jallepalli, C.-F. Yeap, Mahbub Rashed, Christine M. Maziar, A. F. Tasch Jr.

VLSI Design, 1998

Study of Electron Velocity Overshoot in NMOS Inversion Layers.

Wei-Kai Shih, Srinivas Jallepalli, Mahbub Rashed, Christine M. Maziar, A. F. Tasch Jr.

VLSI Design, 1998

1993

Improved universal MOSFET electron mobility degradation models for circuit simulation.

C. Patrick Yue, Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993

Universal MOSFET hole mobility degradation models for circuit simulation.

Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993

1990

A universal MOSFET mobility degradation model for circuit simulation.

Gregory Munson Yeric, A. F. Tasch Jr., Sanjay K. Banerjee

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1990

1989

Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMs.

A. F. Tasch Jr., Laureen H. Parker

Proc. IEEE, 1989

1979

CCD Charge-Coupled Device Memories: A Perspective.

Dileep Bhandarkar, J. Brock Barton, A. F. Tasch Jr.

Computer, 1979