Sebastien Sicre

According to our database, Sebastien Sicre authored at least 4 papers between 2018 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Modeling Hot-Electron Trapping in GaN-based HEMTs.

Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level.

Nicola Modolo, Andrea Minetto, Carlo De Santi, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Charge Trapping in GaN Power Transistors: Challenges and Perspectives.

Matteo Meneghini, Nicola Modolo, Arianna Nardo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Christian Koller, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2018

Charge Injection in Normally-Off p-GaN Gate AlGaN/GaN-on-Si HFETs.

Luca Sayadi, Giuseppe Iannaccone, Sebastien Sicre, Simone Lavanga, Gianluca Fiori, Oliver Haeberlen, Gilberto Curatola

Proceedings of the 48th European Solid-State Device Research Conference, 2018