Shi-Zhe Hong
According to our database1,
Shi-Zhe Hong
authored at least 9 papers
between 2020 and 2021.
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Bibliography
2021
Improved UHV IGBT-Cell for ESD Protection with High Holding Voltage via a 0.5µm BCD Process.
Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021
Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering.
Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021
ESD-Immunity Impact of HV pLDMOS with Drain-side Embedded Horizontal P-type Schottky Modulations.
Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021
2020
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020
ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient.
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020
Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices.
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020
Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020
ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020
A Novel SCR-based Schottky Diode and Lightly P-well Additions of HV 60V nLDMOS on ESD Capability.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020