Tien-Yu Lan

According to our database1, Tien-Yu Lan authored at least 9 papers between 2020 and 2021.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of four.

Timeline

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Bibliography

2021
Improved UHV IGBT-Cell for ESD Protection with High Holding Voltage via a 0.5µm BCD Process.
Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021

Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering.
Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021

ESD-Immunity Impact of HV pLDMOS with Drain-side Embedded Horizontal P-type Schottky Modulations.
Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021

2020
ESD-capability Enhancement of Ultra-high Voltage nLDMOSs by the DPW Discrete Layer.
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020

ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient.
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020

Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices.
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020

Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020

ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020

A Novel SCR-based Schottky Diode and Lightly P-well Additions of HV 60V nLDMOS on ESD Capability.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020


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