Sheng-Kai Fan
According to our database1,
Sheng-Kai Fan
authored at least 11 papers
between 2013 and 2020.
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Bibliography
2020
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020
ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient.
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020
Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices.
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020
Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020
ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020
A Novel SCR-based Schottky Diode and Lightly P-well Additions of HV 60V nLDMOS on ESD Capability.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020
2019
ESD-Reliability Investigation <sup>1</sup>of an UHV Elliptical LDMOS-SCR by the Drain-Side Junction Replacement.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2019
Channel- & Drift Region's STI-Lengths Impacts of ESD Immunity in HV 60 V nLDMOS Devices.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2019
Evaluating the Drift-Region Length Effect of nLDMOS on ESD Ability with a TLP Testing System.
Proceedings of the IEEE 8th Global Conference on Consumer Electronics, 2019
ESD Immunity Impacts of the Drain-Side Heterojunction Device Addition in HV 60 V n/pLDMOS Devices.
Proceedings of the IEEE 8th Global Conference on Consumer Electronics, 2019
2013
Proceedings of the 6th IEEE International Conference on Advanced Infocomm Technology, 2013