Shen-Li Chen
Orcid: 0000-0001-7860-3889
According to our database1,
Shen-Li Chen
authored at least 26 papers
between 2015 and 2023.
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Bibliography
2023
Proceedings of the International Conference on Consumer Electronics - Taiwan, 2023
High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities.
Proceedings of the International Conference on Consumer Electronics - Taiwan, 2023
2022
An Investigation of ESD-Enhancement by the Drain-side Embedded SCR Area Modulation for HV pLDMOSs.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2022
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2022
2021
Improved UHV IGBT-Cell for ESD Protection with High Holding Voltage via a 0.5µm BCD Process.
Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021
Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering.
Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021
ESD-Immunity Impact of HV pLDMOS with Drain-side Embedded Horizontal P-type Schottky Modulations.
Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021
2020
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020
ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient.
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020
Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices.
Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020
Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020
ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020
A Novel SCR-based Schottky Diode and Lightly P-well Additions of HV 60V nLDMOS on ESD Capability.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020
2019
ESD-Reliability Investigation <sup>1</sup>of an UHV Elliptical LDMOS-SCR by the Drain-Side Junction Replacement.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2019
Channel- & Drift Region's STI-Lengths Impacts of ESD Immunity in HV 60 V nLDMOS Devices.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2019
Evaluating the Drift-Region Length Effect of nLDMOS on ESD Ability with a TLP Testing System.
Proceedings of the IEEE 8th Global Conference on Consumer Electronics, 2019
ESD Immunity Impacts of the Drain-Side Heterojunction Device Addition in HV 60 V n/pLDMOS Devices.
Proceedings of the IEEE 8th Global Conference on Consumer Electronics, 2019
2018
Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers.
Sensors, 2018
Design and Impact on ESD/LU Immunities by Drain-Side Super-Junction Structures in Low-(High-)Voltage MOSFETs for the Power Applications.
IEICE Trans. Electron., 2018
2017
Design of High-ESD Reliability in HV Power pLDMOS Transistors by the Drain-Side Isolated SCRs.
IEICE Trans. Electron., 2017
2016
Design on ESD robustness of source-side discrete distribution in the 60-V high-voltage nLDMOS devices.
Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2016
ESD protection design for the 45-V pLDMOS-SCR (p-n-p-arranged) devices with source-discrete distributions.
Proceedings of the IEEE 5th Global Conference on Consumer Electronics, 2016
2015
The <i>I</i>-<i>V</i> Characteristic Prediction of BCD LV pMOSFET Devices Based on an ANFIS-Based Methodology.
Adv. Fuzzy Syst., 2015
ESD reliability building in 0.25 μm 60-V p-channel LDMOS DUTs with different embedded SCRs.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2015
Anti-ESD impacts on 60-V P-channel LDMOS devices as none-ODs zone inserting in the bulk region.
Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2015
By using grey system and Neural-Fuzzy Network methods to obtain the threshold voltage of submicron n-MOSFET DUTs.
Proceedings of the 12th International Conference on Fuzzy Systems and Knowledge Discovery, 2015