Shouzhuo Yang

According to our database, Shouzhuo Yang authored at least 5 papers between 2022 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Defect Dynamics and Flicker Noise in Ferroelectric Field Effect Transistors at Cryogenic Temperatures.

Shouzhuo Yang, Yannick Raffel, Ricardo Olivo, Raik Hoffmann, David Lehninger, Oliver Ostien, Maik Simon, Konrad Seidel, Thomas Kämpfe, Maximilian Lederer, Gerald Gerlach

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

Ferroelectric FETs as Embedded NVRAM Supporting Cryogenic Quantum Processors.

Shouzhuo Yang, Yannick Raffel, Ricardo Olivo, Franz Müller, Raik Hoffmann, David Lehninger, Oliver Ostien, Maik Simon, Konrad Seidel, Thomas Kämpfe, Maximilian Lederer, Gerald Gerlach

Proceedings of the 22nd Non-Volatile Memory Technology Symposium, 2024

Optimized Polarization and Reduced Imprint: Integrating Ferroelectric Aluminum Co-Doped (Hf, Zr)O2 Films and Superlattices into the BEoL for FeMFET and FRAM Application.

David Lehninger, Ayse Sünbül, Kerstin Bernert, Hannes Mähne, Shouzhuo Yang, Thomas Kämpfe, Justine Barbot, Steffen Thiem, Konrad Seidel, Maximilian Lederer

Proceedings of the 22nd Non-Volatile Memory Technology Symposium, 2024

Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions.

Maximilian Lederer, Franz Müller, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel

Proceedings of the IEEE International Memory Workshop, 2024

2022

Using Physics Simulations to Find Targeting Strategies in Competitive Bowling.

Simon Ji, Shouzhuo Yang, Wilber Dominguez, Cacey Bester

CoRR, 2022