Raik Hoffmann

According to our database1, Raik Hoffmann authored at least 9 papers between 2019 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?
Proceedings of the IEEE International Memory Workshop, 2023

Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications.
Proceedings of the IEEE International Memory Workshop, 2023

2022
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology.
Proceedings of the IEEE International Memory Workshop, 2022

Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications.
Proceedings of the International Conference on IC Design and Technology, 2022

2020
BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications.
Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019


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