Konrad Seidel

According to our database1, Konrad Seidel authored at least 20 papers between 2004 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator.
Adv. Intell. Syst., June, 2023

Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?
Proceedings of the IEEE International Memory Workshop, 2023

Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications.
Proceedings of the IEEE International Memory Workshop, 2023

Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress.
Proceedings of the IEEE International Memory Workshop, 2023

2022
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications.
Proceedings of the 19th International SoC Design Conference, 2022

Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination.
Proceedings of the IEEE International Memory Workshop, 2022

Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology.
Proceedings of the IEEE International Memory Workshop, 2022

Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability.
Proceedings of the IEEE International Memory Workshop, 2022

Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications.
Proceedings of the International Conference on IC Design and Technology, 2022

2021
Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application.
Proceedings of the IEEE International Memory Workshop, 2021

2020
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications.
Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019

2016
La-doped ZrO2 based BEoL decoupling capacitors.
Proceedings of the International Conference on IC Design and Technology, 2016

2014
ALD ZrO2 processes for BEoL device applications.
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM.
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

2013
High-density capacitors for SiP and SoC applications based on three-dimensional integrated metal-isolator-metal structures.
Proceedings of 2013 International Conference on IC Design & Technology, 2013

2004
SPIDER-NET: a sensor platform for an intelligent ad-hoc wireless relaying network.
Proceedings of the Second International Workshop on Mobility Management & Wireless Access Protocols, 2004


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