Siyang Liu

According to our database, Siyang Liu authored at least 10 papers between 2010 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Superior Performances of Dynamic On-State Resistance in 1.9kV GaN-on-Sapphire HEMT.

Weihao Lu, Sheng Li, Siyang Liu, Yanfeng Ma, Long Zhang, Jiaxing Wei, Weifeng Sun, Yiheng Li, Yuanyang Xia, Ke Wang, Tinggang Zhu

Proceedings of the IEEE International Conference on Integrated Circuits, 2023

2022

Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices.

Sheng Li, Siyang Liu, Chi Zhang, Le Qian, Shuxuan Xin, Chen Ge, Weifeng Sun

IEEE Trans. Ind. Electron., 2022

2021

Lightning Surge Robustness Analysis and Optimization for an LED Driver Based on a Flyback Converter.

Siyang Liu, Xin Tong, Jiaxing Wei, Weifeng Sun, Zhuo Yang, Peng Ye, Yuanzheng Zhu

IEEE Trans. Ind. Electron., 2021

Novel Multiple-Layer Stack Capacitor and Its Application in the IRPFA Readout Circuit.

Qi Liu, Tuanzhuang Wu, Yanfeng Ma, Siyang Liu, Xiaojuan Xia, Weifeng Sun

IEEE Access, 2021

33.2 A 600V GaN Active Gate Driver with Dynamic Feedback Delay Compensation Technique Achieving 22.5% Turn-On Energy Saving.

Jing Zhu, Ding Yan, Siyuan Yu, Weifeng Sun, Gang Shi, Siyang Liu, Sen Zhang

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

Design of 320×256-30um DI Medium and Short Wave Two-color IRFPA Readout Circuit.

Qi Liu, Weifeng Sun, Siyang Liu

Proceedings of the 5th International Conference on Vision, Image and Signal Processing, 2021

2015

A novel stack package solution of AC-DC chip for high-power density adapters.

Jiaxing Wei, Jianfeng Wang, Ning Wang, Siyang Liu, Weifeng Sun

Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015

2014

A lateral DMOS with partial buried-oxide layer to achieve better RESURF effect.

Chunwei Zhang, Siyang Liu, Daying Sun, Chaohui Yu, Weifeng Sun

IEICE Electron. Express, 2014

2011

Threshold voltage degradation under high Vgs and low Vds on 200 V SOI power devices.

Qinsong Qian, Siyang Liu, Weifeng Sun, Hu Sun

Microelectron. J., 2011

2010

Devices' optimization against hot-carrier degradation in high voltage pLEDMOS transistor.

Hong Wu, Qinsong Qian, Siyang Liu, Weifeng Sun, Longxing Shi

Microelectron. Reliab., 2010