Nailong He

According to our database, Nailong He authored at least 8 papers between 2021 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2026

A novel divided RESURF technology with high-side zero-bias pinch-off JFET and its experiments.

Zhenyan Liu, Teng Liu, Jian Xu, Shixiong Chong, Yuheng Yao, Yongyu Shi, Haoyu Li, Lihui Gu, Nailong He, Sen Zhang, Ming Qiao, Wentong Zhang, Zhaoji Li, Bo Zhang

Microelectron. J., 2026

SOA expansion and reliability enhancement of 700V LDMOS: Experimental characterization and mechanism validation.

Yongshun Li, Teng Liu, Zhenyan Liu, Nailong He, Hao Wang, Ting Wang, Ziao Zhang, Liang Song, Xinxin Liu, Dejin Wang, Sen Zhang

Microelectron. J., 2026

Display brightness perception model based on luminance spatial distribution.

Nailong He, Yuning Zhang, Chenhao Hu, Zhongwen Shen, Lan He, Yueyuan Zhang, Run Wang, Zihan Wang, Wei Wang, Yishi Weng, Baoping Wang

Displays, 2026

2024

High Sensitivity Lateral Hall Device in Silicon on Insulator (SOI) Platform.

Guiqiang Zheng, Qingyin Zhong, Jie Ma, Yichen Li, Nannan Cheng, Nailong He, Sen Zhang, Yongjia Li, Long Zhang, Siyang Liu, Weifeng Sun

Proceedings of the 2024 IEEE SENSORS, Kobe, Japan, October 20-23, 2024, 2024

A Rugged 1200V P-channel LDMOS in Bipolar-CMOS-DMOS Process with Global Potential Control Technology.

Chengwu Pan, Shipeng Chang, Jingjing Hong, Nailong He, Jie Ma, Sen Zhang, Long Zhang, Siyang Liu, Weifeng Sun

Proceedings of the IEEE International Conference on Integrated Circuits, 2024

2023

A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective Dv/Dt Control and High Dv/Dt Immunity.

Siyuan Yu, Qi Zhou, Gang Shi, Tianyang Wu, Jing Zhu, Long Zhang, Weifeng Sun, Sen Zhang, Nailong He, Ye Li

IEEE Trans. Ind. Electron., 2023

2021

Device and Circuit Design for Improving the Freewheeling Characteristics of High Voltage Monolithic Integrated Circuit.

Jing Zhu, Siyuan Yu, Guichuang Zhu, Weifeng Sun, Yunqi Wang, Yangyang Lu, Yunwu Zhang, Sen Zhang, Yan Gu, Nailong He

IEEE Trans. Ind. Electron., 2021

Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices.

Jing Zhu, Siyuan Yu, Yangyang Lu, Weifeng Sun, Chuanyi Cheng, Ding Yan, Yunwu Zhang, Shaohong Li, Long Zhang, Sen Zhang, Nailong He, Yan Gu

IEEE Trans. Ind. Electron., 2021