Subhasis Haldar

According to our database1, Subhasis Haldar authored at least 9 papers between 2006 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach.
Microelectron. J., 2023

2015
Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications.
Proceedings of the 27th International Conference on Microelectronics, 2015

2014
An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering.
Microelectron. J., 2014

Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation.
Microelectron. J., 2014

2012
An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET.
Microelectron. J., 2012

2007
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET.
Microelectron. J., 2007

Two-dimensional subthreshold analysis of sub-micron GaN MESFET.
Microelectron. J., 2007

A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications.
Microelectron. J., 2007

2006
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications.
Microelectron. J., 2006


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