Sylvie Bruyère

According to our database, Sylvie Bruyère authored at least 4 papers between 2001 and 2008.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2008

Impact of silicon nitride CESL on NLDEMOS transistor reliability.

Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo

Microelectron. Reliab., 2008

2007

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride.

Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo

Microelectron. Reliab., 2007

2005

Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors.

Emilie Deloffre, L. Montès, Gérard Ghibaudo, Sylvie Bruyère, Serge Blonkowski, Stéphane Bécu, Mickael Gros-Jean, Sébastien Crémer

Microelectron. Reliab., 2005

2001

Body effect induced wear-out acceleration in ultra-thin oxides.

Sylvie Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo

Microelectron. Reliab., 2001