E. Vincent

According to our database1, E. Vincent authored at least 20 papers between 2001 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2021
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2018
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors.
Microelectron. Reliab., 2018

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2010
Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation.
Microelectron. Reliab., 2010

2007
Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements.
Microelectron. Reliab., 2007

2006
Designing in reliability in advanced CMOS technologies.
Microelectron. Reliab., 2006

2005
A thorough investigation of MOSFETs NBTI degradation.
Microelectron. Reliab., 2005

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.
Microelectron. Reliab., 2005

2004
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides.
Microelectron. Reliab., 2004

2003
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.
Microelectron. Reliab., 2003

Guest Editorial.
Microelectron. Reliab., 2003

Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies.
Microelectron. Reliab., 2003

MIM capacitance variation under electrical stress.
Microelectron. Reliab., 2003

2002
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement.
Microelectron. Reliab., 2002

Gate oxide Reliability assessment optimization.
Microelectron. Reliab., 2002

2001
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.
Microelectron. Reliab., 2001

Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.
Microelectron. Reliab., 2001

Body effect induced wear-out acceleration in ultra-thin oxides.
Microelectron. Reliab., 2001

Failures in ultrathin oxides: Stored energy or carrier energy driven?
Microelectron. Reliab., 2001

Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs.
Microelectron. Reliab., 2001


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