Takayuki Hisaka

According to our database, Takayuki Hisaka authored at least 6 papers between 1999 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs.

Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Tomoki Oku, Shinobu Onoda, Takeshi Ohshima, Eiji Taguchi, Hidehiro Yasuda

Microelectron. Reliab., 2018

2012

Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy.

Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Yoshikazu Terai, Yasufumi Fujiwara

IEICE Electron. Express, 2012

2010

Simultaneous achievement of high performance and high reliability in a 38/77GHz InGaAs/AlGaAs PHEMT MMIC.

Takayuki Hisaka, Hajime Sasaki, Takayuki Kato, Ko Kanaya, Naohito Yoshida, Anita A. Villanueva, Jesús A. del Alamo

IEICE Electron. Express, 2010

2009

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions.

Takayuki Hisaka, Hajime Sasaki, Yoichi Nogami, Kenji Hosogi, Naohito Yoshida, Anita A. Villanueva, Jesús A. del Alamo, Shigehiko Hasegawa, Hajime Asahi

Microelectron. Reliab., 2009

2005

Degradation mechanisms of GaAs PHEMTs in high humidity conditions.

Takayuki Hisaka, Yasuki Aihara, Yoichi Nogami, Hajime Sasaki, Yasushi Uehara, Naohito Yoshida, Kazuo Hayashi

Microelectron. Reliab., 2005

1999

A 12-ps-resolution digital variable-delay macro cell on GaAs 100 K-gates gate array using a meshed air bridge structure.

Akira Ohta, Norio Higashisaka, Tetsuya Heima, Takayuki Hisaka, Hirofumi Nakano, Ryuji Ohmura, Tadashi Takagi, Noriyuki Tanino

IEEE J. Solid State Circuits, 1999