Tao Xu
Orcid: 0009-0008-6208-084XAffiliations:
- Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, State Key Laboratory of Materials for Integrated Circuits, China
According to our database1,
Tao Xu authored at least 7 papers
between 2023 and 2026.
Collaborative distances:
Collaborative distances:
Timeline
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Bibliography
2026
A Novel High-Performance SRAM Design Using Adaptive Write-Assist Circuit and Successive Improvement Offset of SA.
IEEE Trans. Circuits Syst. I Regul. Pap., May, 2026
A 40-nm Embedded Flash With Highly Reliable Bitline Transmission and Low-Voltage Current Sense Amplifier.
IEEE Trans. Very Large Scale Integr. Syst., February, 2026
2025
High-precision single-event transient hardened comparator with the sensitive node transient detection feedback latch technique.
Int. J. Circuit Theory Appl., March, 2025
A programmable high efficiency charge pump system for embedded flash memory with improved current driving capability.
Microelectron. J., 2025
A Wide-Range Voltage and High-Speed Progressive Level Shifter With Charge Pump for Embedded Flash Memory.
Int. J. Circuit Theory Appl., 2025
2023
Int. J. Circuit Theory Appl., October, 2023
A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace application.
Int. J. Circuit Theory Appl., August, 2023