Zhengxuan Zhang

According to our database, Zhengxuan Zhang authored at least 33 papers between 2011 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Modeling Inter-Aspect Relations With Clause and Contrastive Learning for Aspect-Based Sentiment Analysis.

Zhixun Qiu, Kehai Chen, Yun Xue, Zhihao Ma, Zhengxuan Zhang

IEEE Trans. Comput. Soc. Syst., April, 2024

Dynamic Graph Construction Framework for Multimodal Named Entity Recognition in Social Media.

Weixing Mai, Zhengxuan Zhang, Kuntao Li, Yun Xue, Fenghuan Li

IEEE Trans. Comput. Soc. Syst., April, 2024

2023

A novel high-precision single-event transient hardened voltage comparator design.

Yuqiao Xie, Zhongyang Liu, Tao Xu, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou

Int. J. Circuit Theory Appl., October, 2023

A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace application.

Zhongyang Liu, Yuqiao Xie, Tao Xu, Qing Liu, Dawei Bi, Zhiyuan Hu, Shichang Zou, Zhengxuan Zhang

Int. J. Circuit Theory Appl., August, 2023

On development of multimodal named entity recognition using part-of-speech and mixture of experts.

Jianying Chen, Yun Xue, Haolan Zhang, Weiping Ding, Zhengxuan Zhang, Jiehai Chen

Int. J. Mach. Learn. Cybern., June, 2023

An energy-efficient level shifter based on a differential cascade voltage switch structure.

Haineng Zhang, Zhongyang Liu, Dawei Bi, Zhengxuan Zhang, Zhiyi Xiao, Ruofan Dai

Int. J. Circuit Theory Appl., February, 2023

A Token-wise Graph-based Framework for Multimodal Named Entity Recognition.

Zhengxuan Zhang, Weixing Mai, Haoliang Xiong, Chuhan Wu, Yun Xue

Proceedings of the IEEE International Conference on Multimedia and Expo, 2023

2022

A High-Performance and Low-Cost Single-Event Multiple-Node-Upsets Resilient Latch Design.

Zhongyang Liu, Haineng Zhang, Jianwei Jiang, Yanjie Jia, Yuqiao Xie, Shichang Zou, Zhengxuan Zhang

IEEE Trans. Very Large Scale Integr. Syst., 2022

The Strategy Analysis of Grouped Bid Evaluation in Reverse Auction: A Tripartite Evolutionary Game Perspective.

Xuwang Liu, Zhengxuan Zhang, Wei Qi

IEEE Syst. J., 2022

2021

A radiation-hardened 14T SRAM cell for highly reliable space application.

Haineng Zhang, Zhongyang Liu, Yuqiao Xie, Yanjie Jia, Zhengxuan Zhang

IEICE Electron. Express, 2021

2020

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET.

Huilong Zhu, Dawei Bi, Xin Xie, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2020

An Evolutionary Game Study of the Behavioral Management of Bid Evaluations in Reserve Auctions.

Xuwang Liu, Zhengxuan Zhang, Wei Qi, Dingwei Wang

IEEE Access, 2020

2019

Behavior Analysis With an Evolutionary Game Theory Approach for Procurement Bid Evaluation Involving Technical and Business Experts.

Xuwang Liu, Zhengxuan Zhang, Wei Qi, Dingwei Wang

IEEE Syst. J., 2019

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer.

Xin Xie, Huilong Zhu, Mengying Zhang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2019

2018

A novel highly reliable and low-power radiation hardened SRAM bit-cell design.

Dianpeng Lin, Yiran Xu, Xiaonian Liu, Wenyi Zhu, Lihua Dai, Mengying Zhang, Xiaoyun Li, Xin Xie, Jianwei Jiang, Huilong Zhu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2018

A novel self-recoverable and triple nodes upset resilience DICE latch.

Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2018

A novel SEU tolerant memory cell for space applications.

Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2018

Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide.

Zhiyuan Hu, Lihua Dai, Zhengxuan Zhang, Xiaoyun Li, Shichang Zou

IEICE Electron. Express, 2018

Improved Modular Convolution Neural Network for Human Pose Estimation.

Zhengxuan Zhang, Jing Dong, Dongsheng Zhou, Xiaoyong Fang, Xiaopeng Wei

Proceedings of the E-Learning and Games - 12th International Conference, 2018

2017

Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology.

Lei Song, Zhiyuan Hu, Mengying Zhang, Xiaonian Liu, Lihua Dai, Zhengxuan Zhang, Shichang Zou

Microelectron. Reliab., 2017

Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs.

Chao Peng, Yunfei En, Zhengxuan Zhang, Yuan Liu, Zhifeng Lei

Microelectron. Reliab., 2017

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs.

Lihua Dai, Xiaonian Liu, Mengying Zhang, Leqing Zhang, Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, Shichang Zou

Microelectron. Reliab., 2017

2016

Hardening silicon-on-insulator nMOSFETs by multiple-step Si⁺ implantation.

Huixiang Huang, Yanyan Huang, Jiachun Zheng, Sufen Wei, Kai Tang, Dawei Bi, Zhengxuan Zhang

Microelectron. Reliab., 2016

Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs.

Shuang Fan, Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi, Chao Peng, Lei Song, Lihua Dai

Microelectron. Reliab., 2016

2014

Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.

Chao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi

Microelectron. Reliab., 2014

Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment.

Huixiang Huang, Dawei Bi, Zhengxuan Zhang

Microelectron. J., 2014

2013

Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.

Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou

Microelectron. Reliab., 2013

Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.

Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Ming Chen, Shichang Zou

Microelectron. J., 2013

2012

Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.

Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. Reliab., 2012

2011

Comparison of TID response in core, input/output and high voltage transistors for flash memory.

Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou

Microelectron. Reliab., 2011

Total ionizing dose effects in elementary devices for 180-nm flash technologies.

Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. Reliab., 2011

The impact of total ionizing radiation on body effect.

Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Zhangli Liu, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. J., 2011

Impact of within-wafer process variability on radiation response.

Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. J., 2011