Shichang Zou

According to our database1, Shichang Zou authored at least 36 papers between 2011 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
A novel high-precision single-event transient hardened voltage comparator design.
Int. J. Circuit Theory Appl., October, 2023

A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace application.
Int. J. Circuit Theory Appl., August, 2023

2022
A High-Performance and Low-Cost Single-Event Multiple-Node-Upsets Resilient Latch Design.
IEEE Trans. Very Large Scale Integr. Syst., 2022

2020
A Wide-Range-Supply-Voltage Sense Amplifier Circuit for Embedded Flash Memory.
IEEE Trans. Circuits Syst. II Express Briefs, 2020

Electrical performance of 130 nm PD-SOI MOSFET with diamond layout.
Microelectron. J., 2020

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET.
IEICE Electron. Express, 2020

2019
Quadruple Cross-Coupled Latch-Based 10T and 12T SRAM Bit-Cell Designs for Highly Reliable Terrestrial Applications.
IEEE Trans. Circuits Syst. I Regul. Pap., 2019

Demonstration of improvement of specific on-resistance versus breakdown voltage tradeoff for low-voltage power LDMOS.
Microelectron. J., 2019

A charge pump system with new regulation and clocking scheme.
IEICE Electron. Express, 2019

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer.
IEICE Electron. Express, 2019

Soft-Error-Tolerant Ultralow-Leakage 12T SRAM Bitcell Design.
Proceedings of the International Conference on IC Design and Technology, 2019

2018
A 280-KBytes Twin-Bit-Cell Embedded NOR Flash Memory With a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems.
IEEE Trans. Circuits Syst. II Express Briefs, 2018

Investigation and impact of LDD variations on the drain disturb in normally-on SONOS NOR flash device.
Microelectron. Reliab., 2018

A novel highly reliable and low-power radiation hardened SRAM bit-cell design.
IEICE Electron. Express, 2018

A novel self-recoverable and triple nodes upset resilience DICE latch.
IEICE Electron. Express, 2018

A novel SEU tolerant memory cell for space applications.
IEICE Electron. Express, 2018

Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide.
IEICE Electron. Express, 2018

2017
Investigation of read disturb in split-gate memory and its feasible solution.
Microelectron. Reliab., 2017

Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology.
Microelectron. Reliab., 2017

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs.
Microelectron. Reliab., 2017

A macro SPICE model for 2-bits/cell split-gate flash memory cell.
Microelectron. J., 2017

A duplex current-reused CMOS LNA with complementary derivative superposition technique.
Int. J. Circuit Theory Appl., 2017

Area-efficient charge pump with local boost technique for embedded flash memory.
IEICE Electron. Express, 2017

2016
A 0.5-V novel complementary current-reused CMOS LNA for 2.4 GHz medical application.
Microelectron. J., 2016

Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology.
IEICE Electron. Express, 2016

2014
A Novel Sourceline Voltage Compensation Circuit and a Wordline Voltage-Generating System for Embedded nor Flash Memory.
IEEE Trans. Circuits Syst. II Express Briefs, 2014

A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory With a Sensing Current Protection Technique.
IEEE Trans. Circuits Syst. I Regul. Pap., 2014

2013
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.
Microelectron. Reliab., 2013

Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.
Microelectron. J., 2013

A compact and CMOS compatible MMI coupler with very low excess loss.
Proceedings of the 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013

2012
Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.
Microelectron. Reliab., 2012

2011
Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 μm partially depleted silicon-on-insulator n-MOSFETs.
Microelectron. Reliab., 2011

Comparison of TID response in core, input/output and high voltage transistors for flash memory.
Microelectron. Reliab., 2011

Total ionizing dose effects in elementary devices for 180-nm flash technologies.
Microelectron. Reliab., 2011

The impact of total ionizing radiation on body effect.
Microelectron. J., 2011

Impact of within-wafer process variability on radiation response.
Microelectron. J., 2011


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