Dawei Bi

According to our database, Dawei Bi authored at least 25 papers between 2011 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2026

A Novel High-Performance SRAM Design Using Adaptive Write-Assist Circuit and Successive Improvement Offset of SA.

Guoji Qiu, Tao Xu, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi

IEEE Trans. Circuits Syst. I Regul. Pap., May, 2026

A 40-nm Embedded Flash With Highly Reliable Bitline Transmission and Low-Voltage Current Sense Amplifier.

Tao Xu, Guoji Qiu, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi

IEEE Trans. Very Large Scale Integr. Syst., February, 2026

2025

High-precision single-event transient hardened comparator with the sensitive node transient detection feedback latch technique.

Yuqiao Xie, Tao Xu, Zhongyang Liu, Guoji Qiu, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou

Int. J. Circuit Theory Appl., March, 2025

A programmable high efficiency charge pump system for embedded flash memory with improved current driving capability.

Tao Xu, Yuqiao Xie, Guoji Qiu, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi

Microelectron. J., 2025

A Wide-Range Voltage and High-Speed Progressive Level Shifter With Charge Pump for Embedded Flash Memory.

Tao Xu, Guoji Qiu, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi

Int. J. Circuit Theory Appl., 2025

A Novel High-Speed Ultralow Power Double-Node-Upsets Tolerant Automotive Latch Design.

Guoji Qiu, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang

Int. J. Circuit Theory Appl., 2025

A 0.75 <i>µ</i>A-quiescent current, output capacitor-less LDO regulator with high power supply rejection.

Zhengliang Zhao, Lili Lang, Dawei Bi, Yemin Dong

IEICE Electron. Express, 2025

2024

An ultra low-power double-node-upsets hardened latch design.

Zhuo Chen, Yuqiao Xie, Jingfeng Liang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang

Int. J. Circuit Theory Appl., October, 2024

2023

A novel high-precision single-event transient hardened voltage comparator design.

Yuqiao Xie, Zhongyang Liu, Tao Xu, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou

Int. J. Circuit Theory Appl., October, 2023

A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace application.

Zhongyang Liu, Yuqiao Xie, Tao Xu, Qing Liu, Dawei Bi, Zhiyuan Hu, Shichang Zou, Zhengxuan Zhang

Int. J. Circuit Theory Appl., August, 2023

An energy-efficient level shifter based on a differential cascade voltage switch structure.

Haineng Zhang, Zhongyang Liu, Dawei Bi, Zhengxuan Zhang, Zhiyi Xiao, Ruofan Dai

Int. J. Circuit Theory Appl., February, 2023

2020

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET.

Huilong Zhu, Dawei Bi, Xin Xie, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2020

2019

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer.

Xin Xie, Huilong Zhu, Mengying Zhang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2019

2017

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs.

Lihua Dai, Xiaonian Liu, Mengying Zhang, Leqing Zhang, Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, Shichang Zou

Microelectron. Reliab., 2017

2016

Hardening silicon-on-insulator nMOSFETs by multiple-step Si⁺ implantation.

Huixiang Huang, Yanyan Huang, Jiachun Zheng, Sufen Wei, Kai Tang, Dawei Bi, Zhengxuan Zhang

Microelectron. Reliab., 2016

Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs.

Shuang Fan, Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi, Chao Peng, Lei Song, Lihua Dai

Microelectron. Reliab., 2016

2014

Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.

Chao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi

Microelectron. Reliab., 2014

Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment.

Huixiang Huang, Dawei Bi, Zhengxuan Zhang

Microelectron. J., 2014

2013

Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.

Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou

Microelectron. Reliab., 2013

Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.

Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Ming Chen, Shichang Zou

Microelectron. J., 2013

2012

Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.

Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. Reliab., 2012

2011

Comparison of TID response in core, input/output and high voltage transistors for flash memory.

Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou

Microelectron. Reliab., 2011

Total ionizing dose effects in elementary devices for 180-nm flash technologies.

Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. Reliab., 2011

The impact of total ionizing radiation on body effect.

Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Zhangli Liu, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. J., 2011

Impact of within-wafer process variability on radiation response.

Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. J., 2011