Toru Kanazawa

According to our database, Toru Kanazawa authored at least 4 papers between 2012 and 2018.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2018

Type-II HfS₂/MoS₂ Heterojunction Transistors.

Seiko Netsu, Toru Kanazawa, Teerayut Uwanno, Tomohiro Amemiya, Kosuke Nagashio, Yasuyuki Miyamoto

IEICE Trans. Electron., 2018

2017

Vacuum Annealing and Passivation of HfS₂ FET for Mitigation of Atmospheric Degradation.

Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto

IEICE Trans. Electron., 2017

2014

Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density.

Kazuto Ohsawa, Atsushi Kato, Toru Kanazawa, Eiji Uehara, Yasuyuki Miyamoto

IEICE Electron. Express, 2014

2012

Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode.

Atsushi Kato, Toru Kanazawa, Shunsuke Ikeda, Yoshiharu Yonai, Yasuyuki Miyamoto

IEICE Trans. Electron., 2012