Yasuyuki Miyamoto

According to our database, Yasuyuki Miyamoto authored at least 16 papers between 1995 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Innovative RF Device Technologies for Advanced Information and Communications Network Society.

Kozo Makiyama, Shigeki Yoshida, Ken Nakata, Yasuyuki Miyamoto

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2020

Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer.

Yasuyuki Miyamoto, Takahiro Gotow

IEICE Trans. Electron., 2020

2019

Orbital Angular Momentum Mux/Demux Module using Vertically Curved Si Waveguides.

Tomohiro Amemiya, Tomoya Yoshida, Yuki Atsumi, Nobuhiko Nishiyama, Yasuyuki Miyamoto, Youichi Sakakibara, Shigehisa Arai

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2019

2018

Type-II HfS₂/MoS₂ Heterojunction Transistors.

Seiko Netsu, Toru Kanazawa, Teerayut Uwanno, Tomohiro Amemiya, Kosuke Nagashio, Yasuyuki Miyamoto

IEICE Trans. Electron., 2018

2017

Vacuum Annealing and Passivation of HfS₂ FET for Mitigation of Atmospheric Degradation.

Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto

IEICE Trans. Electron., 2017

2016

Recent progress in compound semiconductor electron devices.

Yasuyuki Miyamoto

IEICE Electron. Express, 2016

2014

Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance.

Masayuki Yamada, Ken Uchida, Yasuyuki Miyamoto

IEICE Trans. Electron., 2014

Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density.

Kazuto Ohsawa, Atsushi Kato, Toru Kanazawa, Eiji Uehara, Yasuyuki Miyamoto

IEICE Electron. Express, 2014

2012

Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process.

Yutaro Yamaguchi, Takeshi Sagai, Yasuyuki Miyamoto

IEICE Trans. Electron., 2012

Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO₂ Wires.

Naoaki Takebe, Yasuyuki Miyamoto

IEICE Trans. Electron., 2012

Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode.

Atsushi Kato, Toru Kanazawa, Shunsuke Ikeda, Yoshiharu Yonai, Yasuyuki Miyamoto

IEICE Trans. Electron., 2012

2011

Fabrication of InP/InGaAs DHBTs with Buried SiO₂ Wires.

Naoaki Takebe, Takashi Kobayashi, Hiroyuki Suzuki, Yasuyuki Miyamoto, Kazuhito Furuya

IEICE Trans. Electron., 2011

2010

Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector.

Yasuyuki Miyamoto, Shinnosuke Takahashi, Takashi Kobayashi, Hiroyuki Suzuki, Kazuhito Furuya

IEICE Trans. Electron., 2010

2007

Numerical Analysis of the Effect of P-Regions on the <i>I</i>-<i>V</i> Kink in GaAs MESFETs.

Kazuya Nishihori, Yasuyuki Miyamoto

IEICE Trans. Electron., 2007

2006

Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer.

Yasuyuki Miyamoto, Ryo Nakagawa, Issei Kashima, Masashi Ishida, Nobuya Machida, Kazuhito Furuya

IEICE Trans. Electron., 2006

1995

Very low bit rate video coding using arbitrarily shaped region-based motion compensation.

Yutaka Yokoyama, Yasuyuki Miyamoto, Mutsumi Ohta

IEEE Trans. Circuits Syst. Video Technol., 1995