W. S. Lau

This page is a disambiguation page, it actually contains mutiple papers from persons of the same or a similar name.

Bibliography

2016
The variation of the leakage current characteristics of W/Ta<sub>2</sub>O<sub>5</sub>/W MIM capacitors with the thickness of the bottom W electrode.
Microelectron. Reliab., 2016

Effects of thermal annealing on the charge localization characteristics of HfO<sub>2</sub>/Au/HfO<sub>2</sub> stack.
Microelectron. Reliab., 2016

2014
An investigation on capacitance-trigger ESD protection devices for high voltage integrated circuits.
Microelectron. Reliab., 2014

2012
The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.
Microelectron. Reliab., 2012

2010
Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors.
Microelectron. Reliab., 2010

2009
Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors.
Microelectron. Reliab., 2009

Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 degreeC by Ohmic contact recess etching.
Microelectron. Reliab., 2009

2008
Shape recovery from turntable sequence using rim reconstruction.
Pattern Recognit., 2008

An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory.
Microelectron. Reliab., 2008

A study of the linearity between I<sub>on</sub> and log I<sub>off</sub> of modern MOS transistors and its application to stress engineering.
Microelectron. Reliab., 2008

Effect of a trace of water vapor on Ohmic contact formation for AlGaN/GaN epitaxial wafers.
Microelectron. Reliab., 2008

Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology.
Microelectron. Reliab., 2008

2007
Evidence that N<sub>2</sub>O is a stronger oxidizing agent than O<sub>2</sub> for both Ta<sub>2</sub>O<sub>5</sub> and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si.
Microelectron. Reliab., 2007

Shape Recovery from Turntable Image Sequence.
Proceedings of the Computer Vision, 2007

2001
Solid reconstruction from orthographic views using 2-stage extrusion.
Comput. Aided Des., 2001

2000
Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al<sub>0.3</sub>Ga<sub>0.7</sub>As gate ins.
IEEE Trans. Reliab., 2000

1998
Sun Tzu's as business and management strategies for world class business excellence evaluation under QFD methodology.
Bus. Process. Manag. J., 1998

1997
Solid reconstruction from orthographic opaque views using incremental extrusion.
Comput. Graph., 1997


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