C. H. Tung

According to our database, C. H. Tung authored at least 5 papers between 2002 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

Ultra High Power Cooling Solution for 3D-ICs.

C. J. Wu, S. T. Hsiao, J. Y. Wang, W. H. Lin, C. W. Chang, T. L. Shao, C. H. Tung, Doug C. H. Yu

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021

2007

Evidence that N₂O is a stronger oxidizing agent than O₂ for both Ta₂O₅ and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si.

W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng

Microelectron. Reliab., 2007

2005

Structure of the oxide damage under progressive breakdown.

Felix Palumbo, G. Condorelli, Salvatore Lombardo, Kin Leong Pey, C. H. Tung, L. J. Tang

Microelectron. Reliab., 2005

2003

Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM.

Kin Leong Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin

Microelectron. Reliab., 2003

2002

Physical analysis of hard and soft breakdown failures in ultrathin gate oxides.

M. K. Radhakrishnan, Kin Leong Pey, C. H. Tung, W. H. Lin

Microelectron. Reliab., 2002