Kin Leong Pey

According to our database, Kin Leong Pey authored at least 34 papers between 2002 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric Devices.

Tiang Teck Tan, Yu-Yun Wang, Joel Tan, Tian-Li Wu, Nagarajan Raghavan, Kin Leong Pey

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Backhopping-based STT-MRAM Poisson Spiking Neuron for Neuromorphic Computation.

J. Tan, J. H. Lim, Jae Hyun Kwon, Vinayak Bharat Naik, Nagarajan Raghavan, Kin Leong Pey

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2020

Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device.

Laiqiang Luo, Kalya Shubhakar, Sen Mei, Nagarajan Raghavan, Fan Zhang, Danny Shum, Kin Leong Pey

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Origins and Signatures of Tail Bit Failures in Ultrathin MgO Based STT-MRAM.

Jia Hao Lim, Nagarajan Raghavan, Jae Hyun Kwon, Tae Young Lee, Robin Chao, Nyuk Leong Chung, Kazutaka Yamane, Naganivetha Thiyagarajah, Vinayak Bharat Naik, Kin Leong Pey

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films.

Alok Ranjan, Sean J. O'Shea, Michel Bosman, J. Molina, Nagarajan Raghavan, Kin Leong Pey

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

A transformative engineering and architecture education.

Kin Leong Pey, Lucienne Blessing, Bige Tunçer

Proceedings of the IEEE Frontiers in Education Conference, 2020

2019

Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride - The Knowns and the Unknowns.

Kin Leong Pey, Alok Ranjan, Nagarajan Raghavan, Kalya Shubhakar, Sean J. O'Shea

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Correct Extrapolation Model for TDDB of STT-MRAM MgO Magnetic Tunnel Junctions.

Jia Hao Lim, Nagarajan Raghavan, Vinayak Bharat Naik, Jae Hyun Kwon, Kazutaka Yamane, H. Yang, K. H. Lee, Kin Leong Pey

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms.

Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Understanding spatial resolution of laser voltage imaging.

Venkat Krishnan Ravikumar, Gabriel Lim, Jiann Min Chin, Kin Leong Pey, Joel K. W. Yang

Microelectron. Reliab., 2018

Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.

Xuan Feng, Nagarajan Raghavan, Sen Mei, Shurong Dong, Kin Leong Pey, Hei Wong

Microelectron. Reliab., 2018

Effectiveness of Physical Robot Versus Robot Simulator in Teaching Introductory Programming.

Oka Kurniawan, Norman Tiong Seng Lee, Subhajit Datta, Nachamma Sockalingam, Kin Leong Pey

Proceedings of the IEEE International Conference on Teaching, 2018

Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics.

Alok Ranjan, Nagarajan Raghavan, Sean J. O'Shea, Sen Mei, Michel Bosman, Kalya Shubhakar, Kin Leong Pey

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction.

Jia Hao Lim, Nagarajan Raghavan, Sen Mei, Vinayak Bharat Naik, Jae Hyun Kwon, S. M. Noh, B. Liu, E. H. Toh, Nyuk Leong Chung, Robin Chao, K. H. Lee, Kin Leong Pey

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Preliminary study of integrated physics and mathematics bridging course.

U-Xuan Tan, Yajuan Zhu, Chee Huei Lee, Tin-Lam Toh, Guan Kheng Sze, Shirley Tay, Darren Wong, Kin Leong Pey

Proceedings of the 2017 IEEE Global Engineering Education Conference, 2017

2016

The variation of the leakage current characteristics of W/Ta₂O₅/W MIM capacitors with the thickness of the bottom W electrode.

Danqun Yu, W. S. Lau, Hei Wong, Xuan Feng, Shurong Dong, Kin Leong Pey

Microelectron. Reliab., 2016

Conductive filament formation at grain boundary locations in polycrystalline HfO₂ -based MIM stacks: Computational and physical insight.

Kalya Shubhakar, Sen Mei, Michel Bosman, Nagarajan Raghavan, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey

Microelectron. Reliab., 2016

Analysis of quantum conductance, read disturb and switching statistics in HfO₂ RRAM using conductive AFM.

Alok Ranjan, Nagarajan Raghavan, Joel Molina Reyes, Sean J. O'Shea, Kalya Shubhakar, Kin Leong Pey

Microelectron. Reliab., 2016

Compliance current dominates evolution of NiSi₂ defect size in Ni/dielectric/Si RRAM devices.

Sen Mei, Michel Bosman, Nagarajan Raghavan, Xing Wu, Kin Leong Pey

Microelectron. Reliab., 2016

Effects of thermal annealing on the charge localization characteristics of HfO₂/Au/HfO₂ stack.

Xuan Feng, Shurong Dong, Hei Wong, Danqun Yu, Kin Leong Pey, Kalya Shubhakar, W. S. Lau

Microelectron. Reliab., 2016

2015

An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO₂/SiO_x dielectric stacks for failure analysis.

Kalya Shubhakar, Michel Bosman, O. A. Neucheva, Y. C. Loke, Nagarajan Raghavan, R. Thamankar, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey

Microelectron. Reliab., 2015

Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach.

Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey

Microelectron. Reliab., 2015

Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory.

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey

Microelectron. Reliab., 2015

Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM.

Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer.

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO₂ on reliability of SiO_x interfacial layer.

Kalya Shubhakar, Nagarajan Raghavan, Sunil Singh Kushvaha, Michel Bosman, Zhongrui Wang, Sean J. O'Shea, Kin Leong Pey

Microelectron. Reliab., 2014

High-κ dielectric breakdown in nanoscale logic devices - Scientific insight and technology impact.

Nagarajan Raghavan, Kin Leong Pey, Kalya Shubhakar

Microelectron. Reliab., 2014

Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory.

Nagarajan Raghavan, Daniel D. Frey, Kin Leong Pey

Microelectron. Reliab., 2014

Assessment of read disturb immunity in conducting bridge memory devices - A thermodynamic perspective.

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey

Microelectron. Reliab., 2014

Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices.

Nagarajan Raghavan, Michel Bosman, Daniel D. Frey, Kin Leong Pey

Microelectron. Reliab., 2014

Robust Electromigration reliability through engineering optimization.

Wee Loon Ng, Kheng Chok Tee, Junfeng Liu, Yong Chiang Ee, Oliver Aubel, Chuan Seng Tan, Kin Leong Pey

Microelectron. Reliab., 2014

2005

Structure of the oxide damage under progressive breakdown.

Felix Palumbo, G. Condorelli, Salvatore Lombardo, Kin Leong Pey, C. H. Tung, L. J. Tang

Microelectron. Reliab., 2005

2003

Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM.

Kin Leong Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin

Microelectron. Reliab., 2003

2002

Physical analysis of hard and soft breakdown failures in ultrathin gate oxides.

M. K. Radhakrishnan, Kin Leong Pey, C. H. Tung, W. H. Lin

Microelectron. Reliab., 2002