Wensheng Qian

According to our database, Wensheng Qian authored at least 3 papers between 2018 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Asymmetric SiC trench MOSFET with N-base super barrier rectifier embedded for switching characteristic optimization.

Jing Sun, Zhengxun Deng, Hang Li, Wensheng Qian, Jiye Yang, Yabin Sun, Yanling Shi, Xiaojin Li

IEICE Electron. Express, 2025

2019

Demonstration of improvement of specific on-resistance versus breakdown voltage tradeoff for low-voltage power LDMOS.

Zhaozhao Xu, Donghua Liu, Jun Hu, Feng Jin, Xinjie Yang, Wenting Duan, Wei Yue, Ziquan Fang, Wensheng Qian, Weiran Kong, Shichang Zou

Microelectron. J., 2019

2018

Investigation and impact of LDD variations on the drain disturb in normally-on SONOS NOR flash device.

Zhaozhao Xu, Donghua Liu, Wei Xiong, Jun Hu, Wenting Duan, Hualun Chen, Wensheng Qian, Weiran Kong, Shichang Zou

Microelectron. Reliab., 2018