Yongtae Kim

Affiliations:
  • Korea Institute of Science and Technology (KAIST), Korean Institute of Science and Technology (KIST), Seoul, Korea (PhD 1982)


According to our database1, Yongtae Kim authored at least 3 papers between 2016 and 2019.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book  In proceedings  Article  PhD thesis  Dataset  Other 

Links

On csauthors.net:

Bibliography

2019
Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-Power.
IEEE Access, 2019

On the Low-Frequency Noise Characterization of Z<sup>2</sup>-FET Devices.
IEEE Access, 2019

2016
Novel AlGaN/GaN omega-FinFETs with excellent device performances.
Proceedings of the 46th European Solid-State Device Research Conference, 2016


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