Yoshio Nishi

According to our database1, Yoshio Nishi authored at least 5 papers between 2001 and 2016.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 1988, "For contributions to semiconductor process technology, nonvolatile memory devices, silicon-on-sapphire devices, and VLSI device physics/technology, and for leadership in VLSI memory research and development.".

Timeline

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Links

On csauthors.net:

Bibliography

2016
A CMOS-compatible boosted transistor having >2× drive current and low leakage current.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2014
Ab initio modeling of resistive switching mechanism in binary metal oxides.
Proceedings of the IEEE International Symposium on Circuits and Systemss, 2014

2013
First principles modeling of charged oxygen vacancy filaments in reduced TiO<sub>2</sub>-implications to the operation of non-volatile memory devices.
Math. Comput. Model., 2013

On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations.
Proceedings of the European Solid-State Device Research Conference, 2013

2001
Limits of integrated-circuit manufacturing.
Proc. IEEE, 2001


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